The furnace can make sun level silicon ingot, can also be used to purify other semiconductor materials.

Features

1. High control accuracy, adjust crystallization rate freely;

2. Induction melting method, increase mixing with high melting speed;

3. Directional solidification insulation adopts specially made heating power;

4. Has three current balance, maintenance cost much lower;

5. Using thermostatic degrees controlling instrument;

Main technical parameters

Melting capacity: 5-300KG

Power:  50-400KW

Heating rate:  40 ℃ / Min

Furnace temperature uniformity  ±5℃

Limited vacuum:  6.67×10^-2Pa

Pressure increase rate:  0.01 PaL/S

Rated inflatable pressure:  0.05 Mpa

Solidification method: Drop unidirectional solidification

Servo control range: 0.01 mm - 6mm/Min

Directional solidification rate:  0.03 mm-0.5 mm/Min

Crucible rising rate:  80 to 100 mm/Min